Manufacturer Toshiba Semiconductor and Storage
Description DIODE GEN PURP 200V 1A S-FLAT
Datasheet Datasheet
Product Attributes
Type Description
Mfr Part Number CRH01(TE85L,Q,M)
Mfr Toshiba Semiconductor and Storage
Description DIODE GEN PURP 200V 1A S-FLAT
Min Qty 1
Package Tape & Reel (TR),Cut Tape (CT)
Series -
Product Status Active
Mounting Type Surface Mount
Package Case SOD-123F
Supplier Device Package S-FLAT (1.6x3.5)
Technology Standard
Voltage Dc Reverse Vr Max 200 V
Voltage Forward Vf Max If 980 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time Trr 35 ns
Current Reverse Leakage Vr 10 µA @ 200 V
Operating Temperature Junction -40°C ~ 150°C
Current Average Rectified Io 1A
Capacitance Vr F -
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